Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's

Janet Wang; Neal Kistler; Jason Woo; C. R. Viswanathan; P. K. Vasudev

doi:10.1109/SOSSOI.1990.145723

Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's

Janet Wang, Neal Kistler, Jason Woo, C. R. Viswanathan, P. K. Vasudev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	1990 IEEE SOS/SOI Technology Conference, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	89-90
Number of pages	2
ISBN (Electronic)	0879425733, 9780879425739
DOIs	https://doi.org/10.1109/SOSSOI.1990.145723
State	Published - 1990
Externally published	Yes
Event	1990 IEEE SOS/SOI Technology Conference - Key West, United States Duration: Oct 2 1990 → Oct 4 1990

Publication series

Name	1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference	1990 IEEE SOS/SOI Technology Conference
Country/Territory	United States
City	Key West
Period	10/2/90 → 10/4/90

ASJC Scopus Subject Areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SOSSOI.1990.145723

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Wang, J., Kistler, N., Woo, J., Viswanathan, C. R., & Vasudev, P. K. (1990). Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's. In 1990 IEEE SOS/SOI Technology Conference, Proceedings (pp. 89-90). Article 145723 (1990 IEEE SOS/SOI Technology Conference, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOSSOI.1990.145723

Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's. / Wang, Janet; Kistler, Neal; Woo, Jason et al.
1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc., 1990. p. 89-90 145723 (1990 IEEE SOS/SOI Technology Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, J, Kistler, N, Woo, J, Viswanathan, CR & Vasudev, PK 1990, Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's. in 1990 IEEE SOS/SOI Technology Conference, Proceedings., 145723, 1990 IEEE SOS/SOI Technology Conference, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 89-90, 1990 IEEE SOS/SOI Technology Conference, Key West, United States, 10/2/90. https://doi.org/10.1109/SOSSOI.1990.145723

Wang J, Kistler N, Woo J, Viswanathan CR, Vasudev PK. Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's. In 1990 IEEE SOS/SOI Technology Conference, Proceedings. Institute of Electrical and Electronics Engineers Inc. 1990. p. 89-90. 145723. (1990 IEEE SOS/SOI Technology Conference, Proceedings). doi: 10.1109/SOSSOI.1990.145723

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Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFET's

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

OpenUrl availability

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